Samsung Electronics and MIT Researchers Unveil Future of 2D Semiconductors

Samsung Electronics and researchers from the Massachusetts Institute of Technology (MIT) have reported significant advancements in the future of 2D semiconductors set to revolutionize the semiconductor industry, particularly in areas such as channel materials, integration of metal contacts and gate dielectrics, and the industrialization of 2D semiconductor-based transistors for monolithic 3D integration.

Researchers have identified molybdenum disulfide (MoS₂) as a promising channel material due to its flexibility, transparency, and excellent electronic properties. MoS₂, consisting of a single layer of molybdenum atoms sandwiched between two layers of sulfur atoms, offers high electron mobility and efficient conduction properties, making it ideal for next-generation semiconductor transistors.

A significant breakthrough in this research involves using bismuth as a semimetal to reduce contact resistance between metal electrodes and monolayer semiconductor materials, addressing the metal-induced gap state issue, which previously hindered the efficient flow of charge carriers in semiconductor devices.

Samsung's development of amorphous boron nitride (a-BN), with its ultra-low dielectric constant and strong mechanical properties, offers promising applications in reducing electrical interference and improving device performance. The material can be grown on a wafer scale at low temperatures, making it compatible with existing semiconductor processes.

The integration of 2D semiconductors with existing silicon-based CMOS processes at temperatures below 400°C is crucial for advancing 3D integrated circuits; enhancing energy efficiency and functionality, and enabling the production of more compact and efficient semiconductor devices.

MIT researchers have demonstrated methods to grow uniform layers of MoS₂ on silicon wafers using metal-organic chemical vapor deposition (MOCVD) processes. This method ensures no part of the silicon wafer is damaged during the process, promoting better material uniformity and faster growth times.

The research underscores the importance of overcoming existing challenges, such as thermal management and ensuring stable, low-resistance metal contacts. Future efforts will likely focus on refining these processes and exploring new materials to push the boundaries of semiconductor technology further. This collaboration between Samsung and MIT highlights the potential for 2D materials to revolutionize the semiconductor industry by enabling more advanced, efficient, and compact devices.

These advancements signal a significant shift towards the next generation of semiconductors, potentially extending Moore's Law and driving innovation in various high-tech industries. As the technology progresses from experimental validations to full-scale functional integration, the semiconductor industry stands on the brink of a new era of miniaturization and performance enhancement.

The collaboration between Samsung Electronics and MIT represents a significant milestone in the evolution of 2D semiconductors. By addressing key challenges and leveraging innovative materials, this partnership is paving the way for the next generation of semiconductor technology, promising enhanced performance, efficiency, and integration capabilities for future electronic devices.