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Wolfspeed CGHV40100F

RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Nitride, N-Channel, High Electron Mobility FET

Product Details

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Compliance

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RoHS
Compliant

Dimensions

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Height
4.19 mm

Supply Chain

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Lifecycle Status
Production

Technical

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Continuous Drain Current (ID)
8.7 A
Current Rating
8.7 A
Drain to Source Breakdown Voltage
100 V
Drain to Source Voltage (Vdss)
150 V
Efficiency
55 %
Gain
17.5 dB
Gate to Source Voltage (Vgs)
-10 V
Max Frequency
3 GHz
Max Junction Temperature (Tj)
225 °C
Max Operating Temperature
150 °C
Max Output Power
100 W
Min Operating Temperature
-40 °C
Number of Channels
1
Output Power
116 W
Test Current
600 mA
Test Voltage
50 V
Voltage Rating
50 V

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