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Wolfspeed CGHV40050P

RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Nitride, N-Channel, High Electron Mobility FET

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Continuous Drain Current (ID)
6.3 A
Drain to Source Breakdown Voltage
100 V
Drain to Source Voltage (Vdss)
150 V
Efficiency
53%
Gain
53 %
Gate to Source Voltage (Vgs)
-10 V
Max Frequency
4 GHz
Max Junction Temperature (Tj)
225 °C
Max Operating Temperature
225 °C
Max Output Power
80 °C
Min Operating Temperature
-40 °C
Number of Channels
-40 °C
Voltage Rating
50 V

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