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Wolfspeed C3M0120065J

650V silicon carbide MOSFET technology optimized for high performance power electronics applications

Product Details

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Dimensions

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Height
4.82 mm

Physical

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Case/Package
TO-263-7

Technical

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Continuous Drain Current (ID)
21 A
Drain to Source Breakdown Voltage
650 V
Drain to Source Resistance
120 mΩ
Drain to Source Voltage (Vdss)
650 V
Gate to Source Voltage (Vgs)
19 V
Max Junction Temperature (Tj)
175 °C
Max Operating Temperature
175 °C
Min Operating Temperature
-40 °C
Number of Channels
1
Power Dissipation
86 W
Turn-Off Delay Time
18 ns
Turn-On Delay Time
8 ns

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