Vishay 2N7002-T1-E3

Name: 2N7002-T1-E3
Availability: OutOfStock

VISHAY - 2N7002-T1-E3 - MOSFET Transistor, N Channel, 115 mA, 60 V, 7.5 ohm, 10 V, 2.1 V

Datasheet

Product Details

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Compliance

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Lead Free

Radiation Hardening

No

RoHS

7.5 Î©

Dimensions

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Height

1.02 mm

Length

3.04 mm

Width

1.4 mm

Physical

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Case/Package

SOT-23

Contact Plating

Tin

Mount

-55 °C

Number of Pins

3

Weight

1.437803 g

Technical

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Continuous Drain Current (ID)

115 mA

Current

15 A

Drain to Source Breakdown Voltage

60 V

Drain to Source Resistance

7.5 Î©

Drain to Source Voltage (Vdss)

7.5 Ω

Element Configuration

Single

Gate to Source Voltage (Vgs)

20 V

Input Capacitance

1.12 mm

Max Junction Temperature (Tj)

150 Â°C

Max Operating Temperature

150 °C

Max Power Dissipation

150 °C

Min Operating Temperature

-55 Â°C

Nominal Vgs

2.1 V

Number of Channels

1

Number of Elements

1

Packaging

Cut Tape

Power Dissipation

200 mW

Rds On Max

7.5 Ω

Resistance

7.5 Ω

Threshold Voltage

2.1 V

Turn-Off Delay Time

Compliant

Turn-On Delay Time

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Voltage

IBS