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Vishay Siliconix SI9926BDY-T1-E3

MOSFET, Dual, N-Channel, 20V, 8.2A, 2W, SO-8 Siliconix / Vishay SI9926BDY-T1-E3

Product Details

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Compliance

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Lead Free
Lead Free
Radiation Hardening
No
RoHS
Compliant

Dimensions

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Height
1.5494 mm
Length
4.9784 mm
Width
3.9878 mm

Physical

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Case/Package
SO
Mount
Surface Mount
Number of Pins
8
Weight
506.605978 mg

Technical

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Continuous Drain Current (ID)
6.2 A
Drain to Source Breakdown Voltage
20 V
Drain to Source Resistance
20 mΩ
Drain to Source Voltage (Vdss)
20 V
Element Configuration
Dual
Fall Time
50 ns
Gate to Source Voltage (Vgs)
12 V
Max Operating Temperature
150 °C
Max Power Dissipation
1.14 W
Min Operating Temperature
-55 °C
Nominal Vgs
600 mV
Number of Channels
2
Number of Elements
2
Power Dissipation
1.14 W
Rds On Max
20 mΩ
Resistance
20 mΩ
Rise Time
50 ns
Turn-Off Delay Time
31 ns
Turn-On Delay Time
35 ns

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