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Vishay Siliconix SI2302ADS-T1-GE3

N CH MOSFET; Transistor Polarity: N Channel; Continuous Drain Current Id: 2.1A; Dr

Product Details

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Compliance

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Lead Free
Lead Free
RoHS
Compliant

Dimensions

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Height
1.02 mm
Length
3.04 mm
Width
1.4 mm

Physical

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Case/Package
SOT-23-3
Mount
Surface Mount
Number of Pins
3
Weight
1.437803 g

Technical

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Continuous Drain Current (ID)
2.1 A
Drain to Source Breakdown Voltage
20 V
Drain to Source Resistance
60 mΩ
Drain to Source Voltage (Vdss)
20 V
Element Configuration
Single
Fall Time
55 ns
Gate to Source Voltage (Vgs)
8 V
Input Capacitance
300 pF
Max Operating Temperature
150 °C
Max Power Dissipation
700 mW
Min Operating Temperature
-55 °C
Nominal Vgs
950 mV
Number of Channels
1
Number of Elements
1
Power Dissipation
700 mW
Rds On Max
60 mΩ
Rise Time
55 ns
Threshold Voltage
950 mV
Turn-Off Delay Time
16 ns
Turn-On Delay Time
7 ns

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