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Toshiba TK6A60W,S4VX

Trans MOSFET N-CH Si 600V 6.2A 3-Pin(3+Tab) TO-220SIS Magazine

Product Details

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Compliance

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RoHS
Compliant

Physical

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Case/Package
TO-220-3
Mount
Through Hole

Technical

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Capacitance
390 pF
Continuous Drain Current (ID)
6.2 A
Drain to Source Breakdown Voltage
600 V
Drain to Source Resistance
680 mΩ
Drain to Source Voltage (Vdss)
600 V
Element Configuration
Single
Fall Time
7 ns
Gate to Source Voltage (Vgs)
30 V
Input Capacitance
390 pF
Max Operating Temperature
150 °C
Max Power Dissipation
30 W
Min Operating Temperature
-55 °C
Power Dissipation
30 W
Rds On Max
750 mΩ
Rise Time
18 ns
Turn-Off Delay Time
55 ns

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