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Toshiba TK12A60D(STA4,Q,M)

Trans MOSFET N-CH Si 600V 12A 3-Pin(3+Tab) TO-220SIS

Product Details

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Compliance

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Radiation Hardening
No
RoHS
550 mΩ

Physical

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Case/Package
TO-220-3
Mount
Through Hole
Number of Pins
3

Technical

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Continuous Drain Current (ID)
12:00 AM
Drain to Source Voltage (Vdss)
600 V
Fall Time
IBS
Gate to Source Voltage (Vgs)
30 V
Input Capacitance
1.8 nF
Max Operating Temperature
150 °C
Max Power Dissipation
45 W
Min Operating Temperature
-55 °C
Rds On Max
550 mΩ
Rise Time
40 ns

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