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Toshiba TBC847B,LM

Bipolar (BJT) Transistor NPN 50 V 150 mA 100MHz 320 mW Surface Mount SOT-23

Product Details

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Compliance

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RoHS
Compliant

Physical

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Case/Package
TO-236-3
Mount
Surface Mount

Technical

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Collector Emitter Breakdown Voltage
50 V
Collector Emitter Voltage (VCEO)
400 mV
Max Breakdown Voltage
50 V
Max Collector Current
150 mA
Max Power Dissipation
320 mW
Transition Frequency
100 MHz

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