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Toshiba SSM6N7002BFE,LM

Power Field-Effect Transistor, 6A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

Product Details

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Compliance

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RoHS
Compliant

Dimensions

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Height
550 µm
Length
1.6 mm
Width
1.2 mm

Physical

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Case/Package
SOT-666-6
Mount
Surface Mount

Technical

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Continuous Drain Current (ID)
200 mA
Drain to Source Breakdown Voltage
60 V
Drain to Source Resistance
2.1 Ω
Drain to Source Voltage (Vdss)
60 V
Gate to Source Voltage (Vgs)
10 V
Input Capacitance
17 pF
Max Power Dissipation
150 mW
Number of Channels
2
Packaging
Tape & Reel (TR)
Rds On Max
2.1 Ω

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