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Toshiba SSM3K16FU(TE85L,F)

Power Field-Effect Transistor, 0.1A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

Product Details

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Compliance

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Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
Compliant

Physical

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Case/Package
SC
Mount
-55 °C
Number of Pins
3

Technical

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related specs
Continuous Drain Current (ID)
100 mA
Drain to Source Resistance
3 Ω
Drain to Source Voltage (Vdss)
3 Ω
Gate to Source Voltage (Vgs)
10 V
Max Operating Temperature
150 °C
Max Power Dissipation
150 °C
Min Operating Temperature
-55 °C
Nominal Vgs
1.1 V
Number of Elements
1
Packaging
Cut Tape
Power Dissipation
150 mW
Threshold Voltage
1.1 V

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