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Toshiba SSM3K15AFU,LF

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III)

Product Details

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Compliance

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RoHS
Compliant

Dimensions

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Height
1.1 mm

Physical

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Case/Package
SOT-323
Mount
Surface Mount

Technical

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Continuous Drain Current (ID)
100 mA
Drain to Source Breakdown Voltage
30 V
Drain to Source Resistance
2.3 Ω
Drain to Source Voltage (Vdss)
30 V
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
13.5 pF
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
150 mW
Number of Channels
1
Packaging
Tape & Reel (TR)
Power Dissipation
150 mW
Rds On Max
3.6 Ω
Turn-Off Delay Time
35 ns
Turn-On Delay Time
5.5 ns

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