Toshiba RN4985,LF(CT

Name: RN4985,LF(CT
Availability: OutOfStock

NPN/PNP Epitaxial Type (PCT Process) (Transistor with Built-in Bias Resistor)

Product Details

Select to search
related specs

RoHS

Compliant

Select to search
related specs

Mount

Surface Mount

Select to search
related specs

Collector Emitter Breakdown Voltage

50 V

Collector Emitter Voltage (VCEO)

300 mV

Max Breakdown Voltage

50 V

Max Collector Current

100 mA

Max Power Dissipation

200 mW

Packaging

Tape & Reel (TR)

Transition Frequency

200 MHz

Call or Request Quote for Pricing