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Toshiba RN1910FE,LF(CT

Bipolar Transistors - Pre-Biased Bias Resistor Built-in transistor

Product Details

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Compliance

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RoHS
Compliant

Physical

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Case/Package
SOT-563
Mount
Surface Mount
Weight
3.005049 mg

Technical

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Collector Emitter Breakdown Voltage
50 V
Collector Emitter Voltage (VCEO)
300 mV
Continuous Collector Current
100 mA
Emitter Base Voltage (VEBO)
5 V
hFE Min
120
Max Breakdown Voltage
50 V
Max Collector Current
100 mA
Max Power Dissipation
100 mW
Packaging
Tape & Reel (TR)
Polarity
NPN
Transition Frequency
250 MHz

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