Toshiba GT60M303(Q)

Name: GT60M303(Q)
Availability: OutOfStock

Trans IGBT Chip N-CH 900V 60A 170000mW 3-Pin(3+Tab) TO-3PL

Product Details

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Lead Free

Radiation Hardening

9256762

RoHS

Compliant

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Mount

-55 °C

Number of Pins

3

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Collector Emitter Breakdown Voltage

900 V

Collector Emitter Voltage (VCEO)

900 V

Element Configuration

Single

Max Collector Current

60 A

Max Operating Temperature

150 Â°C

Max Power Dissipation

150 °C

Min Operating Temperature

-55 Â°C

Power Dissipation

170 W

Reverse Recovery Time

2.5 µs

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