Toshiba GT50J325

Name: GT50J325
Availability: OutOfStock

Trans IGBT Chip N-CH 600V 50A 240000mW 3-Pin(3+Tab) TO-3PL

Product Details

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Radiation Hardening

No

REACH SVHC

No SVHC

RoHS

Compliant

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Mount

-55 °C

Number of Pins

3

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Collector Emitter Breakdown Voltage

600 V

Collector Emitter Saturation Voltage

2.45 V

Collector Emitter Voltage (VCEO)

600 V

Element Configuration

Single

Max Collector Current

50 A

Max Operating Temperature

150 Â°C

Max Power Dissipation

150 °C

Min Operating Temperature

-55 Â°C

Power Dissipation

240 W

Rise Time

70 ns

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