Toshiba GT25Q102

Name: GT25Q102
Availability: OutOfStock

IGBT, 1200V, TO-3P(LH); Transistor Type: IGBT; Transistor Polarity: N Channel; Voltage, Vces: 1200V; Current Ic...

Product Details

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RoHS

Compliant

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Number of Pins

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Collector Emitter Breakdown Voltage

1.2 kV

Collector Emitter Saturation Voltage

2.7 V

Collector Emitter Voltage (VCEO)

1.2 kV

Max Operating Temperature

150 Â°C

Max Power Dissipation

150 °C

Power Dissipation

200 W

Rise Time

100 ns

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