Toshiba GT20J321

Name: GT20J321
Availability: OutOfStock

Trans IGBT Chip N-CH 600V 20A 3-Pin(3+Tab) TO-220NIS

Product Details

Select to search
related specs

Radiation Hardening

No

RoHS

Compliant

Select to search
related specs

Mount

Through Hole

Number of Pins

3

Select to search
related specs

Collector Emitter Breakdown Voltage

600 V

Collector Emitter Saturation Voltage

2.45 V

Collector Emitter Voltage (VCEO)

600 V

Element Configuration

Single

Max Collector Current

20 A

Max Operating Temperature

150 Â°C

Max Power Dissipation

150 °C

Power Dissipation

45 W

Rise Time

40 ns

Call or Request Quote for Pricing