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Toshiba GT20D101

Silicon N-Channel Type IGBT for High Power Amplifier Application N

Product Details

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Compliance

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RoHS
Compliant

Physical

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Mount
Through Hole
Number of Pins
3

Technical

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Collector Emitter Voltage (VCEO)
250 V
Element Configuration
Single
Max Operating Temperature
150 °C
Min Operating Temperature
-55 °C

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