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Toshiba 2SK3767(Q)

Power Field-Effect Transistor, 2A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

Product Details

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Compliance

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Lead Free
Lead Free
Radiation Hardening
No
RoHS
Compliant

Physical

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Mount
Through Hole
Number of Pins
3

Technical

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related specs
Continuous Drain Current (ID)
2 A
Current Rating
2 A
Drain to Source Breakdown Voltage
600 V
Drain to Source Resistance
4.5 Ω
Element Configuration
Single
Fall Time
18 ns
Gate to Source Voltage (Vgs)
30 V
Max Operating Temperature
150 °C
Min Operating Temperature
-55 °C
Number of Elements
1
Packaging
Bulk
Power Dissipation
25 W
Rise Time
40 ns
Turn-Off Delay Time
48 ns
Voltage Rating (DC)
600 V

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