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Toshiba 2SK3566(STA4,Q,M)

Mosfet Transistor, N Channel, 2.5 A, 900 V, 6.4 Ohm, 10 V, 4 V Rohs Compliant: Yes

Product Details

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Compliance

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Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
6.4 Ω

Physical

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Case/Package
TO-220-3
Mount
Through Hole
Number of Pins
3

Technical

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Continuous Drain Current (ID)
2.5 A
Drain to Source Breakdown Voltage
900 V
Drain to Source Resistance
5.6 Ω
Drain to Source Voltage (Vdss)
900 V
Element Configuration
Single
Fall Time
30 ns
Gate to Source Voltage (Vgs)
30 V
Input Capacitance
470 pF
Max Operating Temperature
150 °C
Max Power Dissipation
40 W
Min Operating Temperature
-55 °C
Nominal Vgs
4 V
Power Dissipation
40 W
Rds On Max
6.4 Ω
Rise Time
20 ns
Threshold Voltage
4 V
Turn-Off Delay Time
Compliant
Turn-On Delay Time
IBS

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