Toshiba 2SK3562

Name: 2SK3562
Availability: OutOfStock

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PIE-MOSVI)

Product Details

Select to search
related specs

RoHS

Compliant

Select to search
related specs

Mount

-55 °C

Number of Pins

3

Select to search
related specs

Continuous Drain Current (ID)

6:00 AM

Current

6 A

Drain to Source Resistance

6 A

Drain to Source Voltage (Vdss)

900 mΩ

Gate to Source Voltage (Vgs)

30 V

Max Operating Temperature

150 Â°C

Max Power Dissipation

150 °C

Min Operating Temperature

-55 Â°C

Number of Elements

1

Power Dissipation

40 W

Threshold Voltage

4 V

Voltage

600 V

Call or Request Quote for Pricing