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Toshiba 2SD1223(TE16L1,NQ)

Bipolar Transistors - BJT NPN VCEO 80V VCE 1.5 Ic 4A hFE 2000 min

Product Details

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Compliance

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RoHS
Compliant

Physical

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Case/Package
TO-252-3
Contact Plating
Silver, Tin
Mount
Surface Mount
Number of Pins
63

Technical

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Collector Base Voltage (VCBO)
100 V
Collector Emitter Breakdown Voltage
80 V
Collector Emitter Saturation Voltage
1.5 V
Collector Emitter Voltage (VCEO)
80 V
Element Configuration
Single
Emitter Base Voltage (VEBO)
5 V
hFE Min
4:00 AM
Max Collector Current
4 A
Max Operating Temperature
150 °C
Max Power Dissipation
1 W
Min Operating Temperature
-55 °C
Polarity
NPN

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