Skip to main content

Toshiba 2SC6026MFVGR,L3F

Bipolar (BJT) Transistor NPN 50 V 150 mA 60MHz 150 mW Surface Mount VESM

Product Details

Find similar products  

Compliance

Select to search
related specs
RoHS
Compliant

Dimensions

Select to search
related specs
Height
500 µm
Length
1.2 mm
Width
800 µm

Physical

Select to search
related specs
Case/Package
SOT-723
Contact Plating
Silver, Tin
Mount
Surface Mount

Technical

Select to search
related specs
Collector Base Voltage (VCBO)
60 V
Collector Emitter Breakdown Voltage
50 V
Collector Emitter Saturation Voltage
150 mV
Collector Emitter Voltage (VCEO)
50 V
Continuous Collector Current
150 mA
Emitter Base Voltage (VEBO)
5 V
Gain Bandwidth Product
60 MHz
hFE Min
550 µm
Max Breakdown Voltage
50 V
Max Collector Current
150 mA
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
150 mW
Min Operating Temperature
-55 °C
Number of Elements
1
Packaging
Tape & Reel (TR)
Polarity
NPN
Power Dissipation
150 mW
Transition Frequency
60 MHz

Purchase

Call or Request Quote for Pricing
Request a Quote

Need Assistance?

Contact Us