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Toshiba 2SC4213-B(TE85L,F)

Bipolar (BJT) Transistor NPN 20 V 300 mA 30MHz 100 mW Surface Mount USM

Product Details

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Compliance

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RoHS
Compliant

Physical

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Case/Package
SOT-323
Contact Plating
Silver, Tin
Mount
Surface Mount
Number of Pins
3

Technical

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Collector Base Voltage (VCBO)
50 V
Collector Emitter Breakdown Voltage
20 V
Collector Emitter Saturation Voltage
42 mV
Collector Emitter Voltage (VCEO)
20 V
Element Configuration
Single
Emitter Base Voltage (VEBO)
25 V
Frequency
30 MHz
Gain Bandwidth Product
30 MHz
hFE Min
200
Max Breakdown Voltage
20 V
Max Collector Current
300 mA
Max Operating Temperature
125 °C
Max Power Dissipation
100 mW
Min Operating Temperature
-55 °C
Number of Elements
1
Packaging
Tape and Reel
Polarity
NPN
Power Dissipation
100 mW
Transition Frequency
30 MHz

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