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Toshiba 2SC2712-Y(TE85L,F)

Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon

Product Details

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Compliance

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Radiation Hardening
No
RoHS
Compliant

Dimensions

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Height
1.1 mm
Length
2.9 mm
Width
1.5 mm

Physical

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Case/Package
TO-226-3
Contact Plating
Copper, Silver, Tin
Mount
Surface Mount, Through Hole
Number of Pins
3

Technical

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Collector Base Voltage (VCBO)
60 V
Collector Emitter Breakdown Voltage
150 V
Collector Emitter Saturation Voltage
250 mV
Collector Emitter Voltage (VCEO)
50 V
Element Configuration
Single
Emitter Base Voltage (VEBO)
5 V
Frequency
80 MHz
Gain Bandwidth Product
80 MHz
hFE Min
120
Max Breakdown Voltage
150 V
Max Collector Current
150 mA
Max Frequency
80 MHz
Max Operating Temperature
125 °C
Max Power Dissipation
150 mW
Min Operating Temperature
-55 °C
Number of Elements
1
Polarity
NPN
Power Dissipation
150 mW
Transition Frequency
200 MHz

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