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Taiwan Semiconductor TSM2302CX

20V 3.9A Single N-Channel Power MOSFET

Product Details

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Compliance

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REACH SVHC
No SVHC
RoHS
Compliant

Physical

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Case/Package
SOT-23
Number of Pins
3

Supply Chain

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Lifecycle Status
NRND

Technical

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Breakdown Voltage
51 V
Clamping Voltage
70.1 V
Continuous Drain Current (ID)
2.4 A
Drain to Source Breakdown Voltage
20 V
Drain to Source Resistance
65 mΩ
Drain to Source Voltage (Vdss)
65 mΩ
Element Configuration
Single
Fall Time
7.56 ns
Forward Voltage
1 V
Gate to Source Voltage (Vgs)
900 mV
Input Capacitance
587 pF
Max Breakdown Voltage
9.8 V
Max Forward Surge Current (Ifsm)
2.5 A
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
150 °C
Max Repetitive Reverse Voltage (Vrrm)
250 V
Max Reverse Leakage Current
1 µA
Min Breakdown Voltage
1 µA
Min Operating Temperature
-55 °C
Nominal Vgs
-55 °C
Number of Channels
2
Packaging
Cut Tape
Peak Pulse Current
21.4 A
Power Dissipation
200 mW
Reverse Recovery Time
50 ns
Reverse Standoff Voltage
24 V
Rise Time
7.56 ns
Test Current
2.5 mA
Threshold Voltage
450 mV
Turn-Off Delay Time
16.61 ns
Zener Voltage
IBS

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