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Taiwan Semiconductor TSM2301CX
Product Details
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Compliance
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REACH SVHC
No SVHC
RoHS
Compliant
Physical
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Case/Package
SOT-23
Number of Pins
3
Supply Chain
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Lifecycle Status
Obsolete
Technical
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Breakdown Voltage
51 V
Clamping Voltage
70.1 V
Continuous Drain Current (ID)
2.8 A
Drain to Source Breakdown Voltage
20 V
Drain to Source Resistance
130 mΩ
Drain to Source Voltage (Vdss)
-20 V
Element Configuration
Single
Fall Time
19 ns
Forward Voltage
1 V
Gate to Source Voltage (Vgs)
-1.6 V
Input Capacitance
447 pF
Max Breakdown Voltage
9.8 V
Max Forward Surge Current (Ifsm)
150 °C
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
1.25 W
Max Repetitive Reverse Voltage (Vrrm)
1 µA
Max Reverse Leakage Current
1 µA
Min Breakdown Voltage
-55 °C
Min Operating Temperature
-55 °C
Nominal Vgs
-450 mV
Number of Channels
2
Packaging
Cut Tape
Peak Pulse Current
21.4 A
Power Dissipation
200 mW
Reverse Recovery Time
50 ns
Reverse Standoff Voltage
24 V
Rise Time
19 ns
Test Current
2.5 mA
Threshold Voltage
IBS
Turn-Off Delay Time
95 ns
Zener Voltage
75 V