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Taiwan Semiconductor TSM1NB60CH
Product Details
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Breakdown Voltage
51 V
Clamping Voltage
70.1 V
Drain to Source Voltage (Vdss)
600 V
Forward Voltage
1 V
Gate to Source Voltage (Vgs)
-1.8 V
Input Capacitance
138 pF
Max Breakdown Voltage
9.8 V
Max Forward Surge Current (Ifsm)
2.5 A
Max Junction Temperature (Tj)
150 °C
Max Repetitive Reverse Voltage (Vrrm)
250 V
Max Reverse Leakage Current
1 µA
Min Breakdown Voltage
25.4 V
Number of Channels
2
Peak Pulse Current
21.4 A
Power Dissipation
200 mW
Reverse Recovery Time
50 ns
Reverse Standoff Voltage
24 V
Test Current
2.5 mA
Zener Voltage
75 V