.png){kind=logo}
.png)
Taiwan Semiconductor TS1117BCP33
Product Details
Find similar products
Compliance
Select to search
related specs
related specs
RoHS
Compliant
Physical
Select to search
related specs
related specs
Case/Package
TO-252
Supply Chain
Select to search
related specs
related specs
Lifecycle Status
Production
Technical
Select to search
related specs
related specs
Breakdown Voltage
51 V
Clamping Voltage
70.1 V
Collector Base Voltage (VCBO)
-40 V
Collector Emitter Saturation Voltage
-400 mV
Collector Emitter Voltage (VCEO)
50 V
Continuous Collector Current
-200 mA
Drain to Source Voltage (Vdss)
-60 V
Dropout Voltage
1.3 V
Emitter Base Voltage (VEBO)
40 V
Forward Voltage
1 V
Gain Bandwidth Product
1 MHz
Gate to Source Voltage (Vgs)
-1.5 V
hFE Min
100
Input Bias Current
5 mA
Input Capacitance
436 pF
Max Breakdown Voltage
9.8 V
Max Forward Surge Current (Ifsm)
2.5 A
Max Input Voltage
15 V
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
125 °C
Max Power Dissipation
15 W
Max Repetitive Reverse Voltage (Vrrm)
250 V
Max Reverse Leakage Current
1 µA
Max Supply Voltage
15 V
Min Breakdown Voltage
25.4 V
Min Operating Temperature
0 °C
Min Supply Voltage
2 V
Nominal Supply Current
25 nA
Number of Channels
2
Number of Outputs
1
Output Current
1 A
Output Type
Fixed
Output Voltage
3.3 V
Peak Pulse Current
21.4 A
Power Dissipation
150 mW
Quiescent Current
5 mA
Reference Voltage
1.25 V
Response Time
1.3 µs
Reverse Recovery Time
50 ns
Reverse Standoff Voltage
24 V
Test Current
2.5 mA
Zener Voltage
75 V