Taiwan Semiconductor SMBJ60A
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Breakdown Voltage
70.2 V
Clamping Voltage
96.8 V
Forward Voltage
1 V
Max Breakdown Voltage
73.7 V
Max Forward Surge Current (Ifsm)
2.5 A
Max Junction Temperature (Tj)
150 °C
Max Repetitive Reverse Voltage (Vrrm)
150 °C
Max Reverse Leakage Current
1 µA
Min Breakdown Voltage
1 µA
Peak Pulse Current
6.5 A
Power Dissipation
200 mW
Reverse Recovery Time
50 ns
Reverse Standoff Voltage
60 V