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Taiwan Semiconductor HS1DFL
Product Details
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Height
1.35 mm
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Lifecycle Status
Production
Technical
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Capacitance
11 pF
Forward Current
1:00 AM
Forward Voltage
1 A
Max Forward Surge Current (Ifsm)
30 A
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Repetitive Reverse Voltage (Vrrm)
150 °C
Max Reverse Leakage Current
5 µA
Min Operating Temperature
5 µA
Peak Reverse Current
-55 °C
Power Dissipation
5 µA
Reverse Recovery Time
50 ns
Reverse Voltage
400 mW