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Taiwan Semiconductor ES1J

Fast / Ultrafast Power Diode, Single, 600 V, 1 A, 1.7 V, 30 A, 150 C

Product Details

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Compliance

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Lead Free
Lead Free
REACH SVHC
No SVHC
RoHS
Compliant

Dimensions

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Height
2.5 mm
Length
4.6 mm
Width
2.83 mm

Physical

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Case/Package
SMA
Mount
-55 °C
Number of Pins
2

Supply Chain

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Lifecycle Status
Production

Technical

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Element Configuration
Single
Forward Current
1:00 AM
Forward Voltage
1 A
Max Forward Surge Current (Ifsm)
30 A
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Repetitive Reverse Voltage (Vrrm)
150 °C
Max Reverse Leakage Current
5 µA
Max Surge Current
5 µA
Min Operating Temperature
-55 °C
Packaging
Cut Tape
Peak Non-Repetitive Surge Current
30 A
Peak Reverse Current
5 µA
Power Dissipation
5 µA
Recovery Time
400 mW
Reverse Recovery Time
35 ns
Reverse Voltage
600 V

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