Taiwan Semiconductor 1V5KE130A
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Breakdown Voltage
130.5 V
Clamping Voltage
179 V
Forward Voltage
1 V
Max Breakdown Voltage
137 V
Max Forward Surge Current (Ifsm)
2.5 A
Max Junction Temperature (Tj)
175 °C
Max Repetitive Reverse Voltage (Vrrm)
175 °C
Max Reverse Leakage Current
5 µA
Min Breakdown Voltage
5 µA
Peak Pulse Current
8.4 A
Power Dissipation
200 mW
Reverse Recovery Time
50 ns
Reverse Standoff Voltage
111 V