Taiwan Semiconductor 1V5KE100A
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Breakdown Voltage
100 V
Clamping Voltage
137 V
Forward Voltage
1 V
Max Breakdown Voltage
105 V
Max Forward Surge Current (Ifsm)
2.5 A
Max Junction Temperature (Tj)
175 °C
Max Repetitive Reverse Voltage (Vrrm)
175 °C
Max Reverse Leakage Current
5 µA
Min Breakdown Voltage
5 µA
Peak Pulse Current
11 A
Power Dissipation
200 mW
Reverse Recovery Time
1.5 kW
Reverse Standoff Voltage
85.5 V