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Taiwan Semiconductor 1N5822 R0

Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 40V V(RRM), Silicon, DO-201AD

Product Details

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Compliance

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Radiation Hardening
500 µA
RoHS
Compliant

Dimensions

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Height
3 A
Length
9.5 mm
Width
5.6 mm

Physical

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Mount
-65 °C
Number of Pins
2

Supply Chain

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Lifecycle Status
Production

Technical

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Element Configuration
Single
Forward Current
3:00 AM
Max Forward Surge Current (Ifsm)
70 A
Max Operating Temperature
125 °C
Max Repetitive Reverse Voltage (Vrrm)
125 °C
Min Operating Temperature
-65 °C
Packaging
Tape and Reel
Peak Non-Repetitive Surge Current
70 A
Peak Reverse Current
500 µA

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