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STMicroelectronics IRF630

Mosfet, Power; N-ch; Vdss 200V; Rds(on) 0.35 Ohm; Id 9A; TO-220; Pd 75W; Vgs +/-20V; Gfs

Product Details

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Compliance

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Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
Compliant

Dimensions

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Height
15.75 mm
Lead Pitch
2.54 mm
Length
10.4 mm
Width
4.6 mm

Physical

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Case/Package
TO-220
Mount
Through Hole
Number of Pins
3
Weight
4.535924 g

Supply Chain

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Lifecycle Status
Production

Technical

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Continuous Drain Current (ID)
9 A
Current Rating
9 A
Drain to Source Breakdown Voltage
200 V
Drain to Source Resistance
400 mΩ
Drain to Source Voltage (Vdss)
200 V
Dual Supply Voltage
200 V
Element Configuration
Single
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
700 pF
Max Operating Temperature
150 °C
Max Power Dissipation
75 W
Min Operating Temperature
-65 °C
Nominal Vgs
3 V
Number of Elements
1
Power Dissipation
75 W
Rds On Max
400 mΩ
Resistance
400 mΩ
Reverse Recovery Time
170 ns
Rise Time
15 ns
Threshold Voltage
3 V
Turn-On Delay Time
10 ns
Voltage Rating (DC)
200 V

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