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STMicroelectronics 2STR1230

STMICROELECTRONICS 2STR1230 Bipolar (BJT) Single Transistor, NPN, 30 V, 500 mW, 1.5 A, 330

Product Details

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Compliance

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Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
Compliant

Dimensions

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Height
950 µm
Length
2.9 mm
Width
1.3 mm

Physical

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Case/Package
SOT-23
Contact Plating
Tin
Mount
Surface Mount
Number of Pins
3

Technical

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Collector Base Voltage (VCBO)
30 V
Collector Emitter Breakdown Voltage
30 V
Collector Emitter Saturation Voltage
850 mV
Collector Emitter Voltage (VCEO)
30 V
Current Rating
1.5 A
Element Configuration
Single
Emitter Base Voltage (VEBO)
5 V
hFE Min
210
Max Breakdown Voltage
30 V
Max Collector Current
1.5 A
Max Operating Temperature
150 °C
Max Power Dissipation
500 mW
Min Operating Temperature
-65 °C
Number of Elements
1
Packaging
Digi-Reel®
Polarity
NPN
Power Dissipation
500 mW
Termination
SMD/SMT
Voltage Rating (DC)
30 V

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