Semelab BUZ906

Name: BUZ906
Availability: OutOfStock

8A I(D) 200V 1-Element P-Channel Silicon Metal-oxide Semiconductor FET TO-3

Product Details

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REACH SVHC

No SVHC

RoHS

Compliant

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Case/Package

TO-3

Number of Pins

2

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Continuous Drain Current (ID)

8 A

Drain to Source Breakdown Voltage

200 V

Drain to Source Resistance

1.5 Ω

Drain to Source Voltage (Vdss)

-200 V

Max Operating Temperature

150 °C

Max Power Dissipation

125 W

Nominal Vgs

-1.5 V

Power Dissipation

125 W

Threshold Voltage

-1.5 V

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