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ROHM R8002ANX

Trans MOSFET N-CH Si 800V 2A 3-Pin(3+Tab) TO-220FM Bulk

Product Details

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Compliance

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Lead Free
Lead Free
Radiation Hardening
No
RoHS
Compliant

Physical

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Case/Package
TO-220-3
Mount
Through Hole

Technical

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Continuous Drain Current (ID)
2 A
Drain to Source Breakdown Voltage
800 V
Drain to Source Resistance
4.3 Ω
Drain to Source Voltage (Vdss)
800 V
Element Configuration
Single
Fall Time
70 ns
Gate to Source Voltage (Vgs)
30 V
Input Capacitance
210 pF
Max Operating Temperature
150 °C
Max Power Dissipation
35 W
Min Operating Temperature
-55 °C
Packaging
Bulk
Power Dissipation
35 W
Rds On Max
4.3 Ω
Rise Time
20 ns
Turn-Off Delay Time
33 ns
Turn-On Delay Time
17 ns

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