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ROHM QS8M51TR

2A I(D) 100V 0.355ohm 2-Element N-Channel and P-Channel Silicon Metal-oxide Semiconductor FET

Product Details

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Compliance

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Lead Free
Lead Free
Radiation Hardening
No
RoHS
Compliant

Physical

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Case/Package
SMD/SMT
Mount
Surface Mount
Number of Pins
8
Number of Terminals
8

Supply Chain

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Lifecycle Status
Production

Technical

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Continuous Drain Current (ID)
1.5 A
Drain to Source Resistance
240 mΩ
Drain to Source Voltage (Vdss)
100 V
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
290 pF
Max Operating Temperature
150 °C
Max Power Dissipation
1.5 W
Min Operating Temperature
-55 °C
Packaging
Digi-Reel®
Rds On Max
325 mΩ
Turn-On Delay Time
10 ns

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