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ROHM DTC124GUAT106

Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 5 V 1 mA 25 MHz 2 mW Surface Mount UMT3

Product Details

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Compliance

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Lead Free
Lead Free
Radiation Hardening
No
RoHS
Compliant

Physical

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Mount
Surface Mount
Number of Pins
3
Number of Terminals
3

Supply Chain

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Lifecycle Status
Production

Technical

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Collector Emitter Breakdown Voltage
50 V
Collector Emitter Voltage (VCEO)
50 V
Continuous Collector Current
100 mA
Current Rating
100 mA
Element Configuration
Single
Emitter Base Voltage (VEBO)
5 V
hFE Min
56
Max Breakdown Voltage
50 V
Max Collector Current
100 mA
Max Operating Temperature
150 °C
Max Power Dissipation
200 mW
Min Operating Temperature
-55 °C
Polarity
NPN
Power Dissipation
200 mW
Transition Frequency
250 MHz
Voltage Rating (DC)
50 V

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