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ROHM 2SD2391T100Q

Small Signal Bipolar Transistor, 2A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon

Product Details

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Compliance

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Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
Compliant

Dimensions

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Height
1.4 mm
Length
4.7 mm
Width
2.7 mm

Physical

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Case/Package
SOT-89
Contact Plating
Copper, Tin
Mount
Surface Mount
Number of Pins
3

Technical

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Collector Base Voltage (VCBO)
60 V
Collector Emitter Breakdown Voltage
60 V
Collector Emitter Saturation Voltage
130 mV
Collector Emitter Voltage (VCEO)
60 V
Continuous Collector Current
2:00 AM
Current Rating
2 A
Element Configuration
2 A
Emitter Base Voltage (VEBO)
6 V
Gain Bandwidth Product
210 MHz
hFE Min
45
Max Breakdown Voltage
60 V
Max Collector Current
2 A
Max Frequency
100 MHz
Max Operating Temperature
150 °C
Max Power Dissipation
2 W
Min Operating Temperature
-55 °C
Packaging
Cut Tape
Polarity
NPN
Power Dissipation
500 mW
Termination
SMD/SMT
Transition Frequency
210 MHz
Voltage Rating (DC)
IBS

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