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Rochester Electronics IRFHM8342TRPBF

Single N-Channel 30 V 16 mOhm 5 nC HEXFET Power Mosfet - PQFN 3.3 x 3.3 mm

Product Details

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Compliance

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Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
13 mΩ

Physical

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Mount
-55 °C
Number of Pins
8

Supply Chain

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Lifecycle Status
Obsolete

Technical

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Continuous Drain Current (ID)
10:00 AM
Drain to Source Resistance
18 A
Drain to Source Voltage (Vdss)
20 mΩ
Fall Time
5.6 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
560 pF
Max Operating Temperature
150 °C
Max Power Dissipation
150 °C
Min Operating Temperature
-55 °C
Number of Channels
1
On-State Resistance
16 mΩ
Package Quantity
16 mΩ
Packaging
Tape & Reel
Power Dissipation
4000
Rds On Max
16 mΩ
Resistance
13 mΩ
Rise Time
16 mΩ
Threshold Voltage
1.8 V
Turn-Off Delay Time
30 ns
Turn-On Delay Time
Compliant

Compliance Documents

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