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onsemi FMB5551

Small Signal Bipolar Transistor, 0.6A I(C), 160V V(BR)CEO, 2-Element, NPN, Silicon

Product Details

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Compliance

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Lead Free
Lead Free
Radiation Hardening
No
RoHS
Compliant

Dimensions

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Height
900 µm
Length
3 mm
Width
1.68 mm

Physical

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Case/Package
SOT-23-6
Mount
Surface Mount
Number of Pins
6
Weight
IBS

Supply Chain

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Lifecycle Status
Production

Technical

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Collector Base Voltage (VCBO)
180 V
Collector Emitter Breakdown Voltage
160 V
Collector Emitter Saturation Voltage
150 mV
Collector Emitter Voltage (VCEO)
160 V
Current Rating
600 mA
Element Configuration
Dual
Emitter Base Voltage (VEBO)
6 V
Frequency
300 MHz
Gain Bandwidth Product
100 MHz
hFE Min
900 µm
Max Collector Current
600 mA
Max Frequency
300 MHz
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
700 mW
Min Operating Temperature
-55 °C
Number of Elements
2
Polarity
NPN
Power Dissipation
700 mW
Transition Frequency
300 MHz
Voltage Rating (DC)
160 V

Compliance Documents

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