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onsemi FJX2222ATF

Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon

Product Details

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Compliance

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Lead Free
Lead Free
Radiation Hardening
No
RoHS
Compliant

Dimensions

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Height
900 µm
Length
2 mm
Width
1.25 mm

Physical

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Case/Package
SOT-323
Mount
Surface Mount
Number of Pins
3
Weight
IBS

Supply Chain

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Lifecycle Status
Obsolete

Technical

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Collector Base Voltage (VCBO)
75 V
Collector Emitter Breakdown Voltage
40 V
Collector Emitter Saturation Voltage
1 V
Collector Emitter Voltage (VCEO)
40 V
Current Rating
600 mA
Element Configuration
Single
Emitter Base Voltage (VEBO)
6 V
Frequency
300 MHz
Gain Bandwidth Product
300 MHz
hFE Min
900 µm
Max Breakdown Voltage
40 V
Max Collector Current
600 mA
Max Frequency
300 MHz
Max Operating Temperature
150 °C
Max Power Dissipation
325 mW
Number of Elements
1
Polarity
NPN
Power Dissipation
325 mW
Transition Frequency
300 MHz
Voltage Rating (DC)
40 V

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