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onsemi FJV1845EMTF

Bipolar Transistors - BJT NPN Epitaxial Transistor

Product Details

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Compliance

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Lead Free
Lead Free
Radiation Hardening
No
RoHS
Compliant

Dimensions

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Height
1.2 mm
Length
2.9 mm
Width
1.3 mm

Physical

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Case/Package
SOT-23
Mount
Surface Mount
Number of Pins
3
Weight
30 mg

Supply Chain

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Lifecycle Status
Obsolete

Technical

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Collector Base Voltage (VCBO)
120 V
Collector Emitter Breakdown Voltage
120 V
Collector Emitter Saturation Voltage
70 mV
Collector Emitter Voltage (VCEO)
120 V
Current Rating
50 mA
Element Configuration
Single
Emitter Base Voltage (VEBO)
5 V
Frequency
100 MHz
Gain Bandwidth Product
110 MHz
hFE Min
400
Max Breakdown Voltage
120 V
Max Collector Current
50 mA
Max Frequency
110 MHz
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
300 mW
Min Operating Temperature
-55 °C
Number of Elements
1
Polarity
NPN
Power Dissipation
300 mW
Transition Frequency
110 MHz
Voltage Rating (DC)
120 V

Compliance Documents

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