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Home Products Discrete Semiconductors Transistors BJTs FJN3305RTA

onsemi FJN3305RTA

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
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Compliance

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Lead Free
Lead Free
Radiation Hardening
No
RoHS
Compliant

Physical

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Case/Package
TO-92-3
Mount
Through Hole
Number of Pins
3
Weight
IBS

Supply Chain

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Lifecycle Status
Obsolete

Technical

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Collector Base Voltage (VCBO)
50 V
Collector Emitter Breakdown Voltage
50 V
Collector Emitter Voltage (VCEO)
50 V
Continuous Collector Current
100 mA
Current Rating
100 mA
Element Configuration
Single
Emitter Base Voltage (VEBO)
10 V
hFE Min
30
Max Breakdown Voltage
50 V
Max Collector Current
100 mA
Max Operating Temperature
150 °C
Max Power Dissipation
300 mW
Min Operating Temperature
-55 °C
Polarity
NPN
Power Dissipation
300 mW
Transition Frequency
250 MHz
Voltage Rating (DC)
50 V

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