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onsemi FJL6920TU

Bipolar Transistors - BJT NPN Si Transistor Tripple Diff Planar

Product Details

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Compliance

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Lead Free
Lead Free
Radiation Hardening
No
RoHS
Compliant

Dimensions

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Height
29 mm

Physical

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Case/Package
TO-264-3
Mount
Through Hole
Number of Pins
3
Weight
6.756 g

Supply Chain

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Lifecycle Status
Production

Technical

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Collector Base Voltage (VCBO)
1.7 kV
Collector Emitter Breakdown Voltage
800 V
Collector Emitter Saturation Voltage
3 V
Collector Emitter Voltage (VCEO)
800 V
Current Rating
20 A
Element Configuration
Single
Emitter Base Voltage (VEBO)
6 V
hFE Min
5
Max Collector Current
30 A
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
200 W
Min Operating Temperature
-55 °C
Number of Elements
1
Polarity
NPN
Power Dissipation
200 W
Voltage Rating (DC)
800 V

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